Finite element approximation to initial-boundary value problems of the semiconductor device equations with magnetic influence

Author:
Jiang Zhu

Journal:
Math. Comp. **59** (1992), 39-62

MSC:
Primary 65N30; Secondary 65N12

DOI:
https://doi.org/10.1090/S0025-5718-1992-1134742-3

MathSciNet review:
1134742

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Abstract | References | Similar Articles | Additional Information

Abstract: We shall consider Zlámal's approach to the nonstationary equations of the semiconductor device theory under magnetic fields, with mixed boundary conditions. Owing to the reduced smoothness of the electric potential and carrier densities *n* and *p* caused by considering the mixed boundary conditions, we must use a nonstandard analysis for this procedure. Existence as well as uniqueness of the approximate solution is proved. The convergence rates obtained in this paper are slower than those previously obtained for pure Dirichlet or Neumann boundary conditions.

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Additional Information

DOI:
https://doi.org/10.1090/S0025-5718-1992-1134742-3

Keywords:
Finite element approximation,
semiconductor device equation,
magnetic field

Article copyright:
© Copyright 1992
American Mathematical Society