Electrodiffusional free boundary problem, in a bipolar membrane (semiconductor diode), at a reverse bias for constant current

Authors:
M. Primicerio, I. Rubinstein and B. Zaltzman

Journal:
Quart. Appl. Math. **57** (1999), 637-659

MSC:
Primary 35R35; Secondary 35Q60, 78A35, 82D37

DOI:
https://doi.org/10.1090/qam/1724297

MathSciNet review:
MR1724297

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Abstract | References | Similar Articles | Additional Information

Abstract: A singular perturbation problem, modeling one-dimensional time-dependent electrodiffusion of ions (holes and electrons) in a bipolar membrane (semi-conductor diode) at a reverse bias is analyzed for galvanostatic (fixed electric current) conditions. It is shown that, as the perturbation parameter tends to zero, the solution of the perturbed problem tends to the solution of a limiting problem which is, depending on the input data, either a conventional bipolar electrodiffusion problem or a particular electrodiffusional time-dependent free boundary problem. In both cases, the properties of the limiting solution are analyzed, along with those of the respective boundary and transition layer solutions.

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Additional Information

DOI:
https://doi.org/10.1090/qam/1724297

Article copyright:
© Copyright 1999
American Mathematical Society