Asymptotic behavior of subsonic entropy solutions of the isentropic Euler-Poisson equations
Authors:
Hailiang Li, Peter Markowich and Ming Mei
Journal:
Quart. Appl. Math. 60 (2002), 773-796
MSC:
Primary 35L60; Secondary 35B40, 35L45, 35L67, 76X05
DOI:
https://doi.org/10.1090/qam/1939010
MathSciNet review:
MR1939010
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Abstract: The hydrodynamic model for semiconductors in one dimension is considered. For perturbated Riemann data, global subsonic (weak) entropy solutions, piecewise continuous and piecewise smooth solutions with shock discontinuities are constructed and their asymptotic behavior is analyzed. In subsonic domains, the solution is smooth and, exponentially as $t \to \infty$, tends to the corresponding stationary solution due to the influence of Poisson coupling. Along the shock discontinuity, the shock strength and the difference of derivatives of solutions decay exponentially affected by the relaxation mechanism.
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R. Courant and K. O. Friedrichs, Supersonic flow and shock waves, Applied Mathematical Sciences Vol. 21, Springer-Verlag, New York, 1948
U. Ascher, P. A. Markowich, and C. Schmeiser, A phase plane analysis of transonic solutions for the hydrodynamic semiconductor model, Math. Models Meth. Appl. Sci. 1, 347β376 (1991)
K. BlΓΈtekjaer, Transport equations for electrons in two-valley semiconductors, IEEE Trans. Electron Devices ED-17, 38β47 (1970)
G. Chen, J. Jerome, and B. Zhang, Particle hydrodynamic moment models in biology and microelectronics: Singular relaxation limits, preprint
G. Chen and D. Wang, Convergence of shock schemes for the compressible Euler-Poisson equations, Comm. Math. Phys. 179, 333β364 (1996)
P. Degond and P. A. Markowich, On a one-dimensional steady-state hydrodynamic model, Appl. Math. Lett. 3, 25β29 (1990)
P. Degond and P. A. Markowich, A steady-state potential flow model for semiconductors, Ann. Math. Pure Appl. IV, 87β98 (1993)
W. Fang and K. Ito, Steady-state solutions of a one-dimensional hydrodynamic model for semiconductors, J. Differential Equations 133, 224β244 (1997)
I. Gamba, Stationary transonic solutions of a one-dimensional hydrodynamic model for semiconductor Comm. Partial Differential Equations 17 (3 & 4), 553β577 (1992)
I. Gamba and C. S. Morawetz, A viscous approximation for a $2 - D$ steady semiconductor or transonic gas dynamic flow: Existence theorem for potential flow, Comm. Pure Appl. Math. 49, 999β1049 (1996)
I. Gasser and R. Natalini, The energy transport and the drift diffusion equations as relaxation limits of the hydrodynamic model for semiconductors, Quart. Appl. Math. 57, 269β282 (1999)
H. Hattori, Stability and instability of steady-state solutions for a hydrodynamic model of semiconductors, Proc. Roy. Soc. Edinburgh A 127, 781β796 (1997)
H. Hattori and C. Zhu, Asymptotic behavior of the solutions to a non-isentropic hydrodynamic model of semiconductors, J. Differential Equations 144, 353β389 (1998)
L. Hsiao, Quasilinear hyperbolic systems and dissipative mechanisms, World Scientific, 1998
L. Hsiao and Hailiang Li, Shock reflection for the damped p-system, Quart. Appl. Math. 60, 437β460 (2002)
L. Hsiao and T. Luo, Nonlinear diffusive phenomena of entropy weak solutions for a system of quasilinear hyperbolic conservation laws with damping, Quart. Appl. Math. 56, 173β198 (1998)
L. Hsiao and S. Q. Tang, Construction and qualitative behavior of solutions for a system of nonlinear hyperbolic conservation laws with damping, Quart. Appl. Math. 53, 487β505 (1995)
L. Hsiao and S. Q. Tang, Construction and qualitative behavior of solutions of perturbed Riemann problem for the system of one-dimensional isentropic flow with damping, J. Differential Equations 123, 480β503 (1995)
L. Hsiao and T. Yang, Asymptotic of initial boundary value problems for hydrodynamic and drift diffusion models for semiconductors, J. Differential Equations, 170, 472β493 (2001)
L. Hsiao and K. Zhang, The relaxation of the hydrodynamic model for semiconductors to drift diffusion equations
L. Hsiao and K. Zhang, The global weak solution and relaxation limits of the initial boundary value problem to the bipolar hydrodynamic model for semiconductors, Math. Models Methods Appl. Sci. 10, 1333β1361 (2000)
J. Jerome, Analysis of charge transport: A mathematical study of semiconductor devices, Springer-Verlag, Heidelberg, 1996
J. Jerome and C. Shu, Energy models for one-carrier transport in semiconductor devices, preprint
H. Li, P. Markowich, and M. Mei, Asymptotic behavior of solutions of the hydrodynamic model of semiconductors, Proc. Royal Soc. Edinburgh, A:132, 359β378 (2002)
T. Li and W. C. Yu, Boundary value problem for quasilinear hyperbolic systems, Duke Univ. Math. Ser. V, 1985
T. Luo, R. Natalini, and Z. Xin, Large time behavior of the solutions to a hydrodynamic model for semiconductors, SIAM J. Math. Anal. 59, 810β830 (1998)
P. Marcati and M. Mei, Asymptotic convergence to steady-state solutions of the initial boundary value problem to a hydrodynamic model for semiconductors, preprint
P. Marcati and R. Natalini, Weak solutions to a hydrodynamic model for semiconductors: The Cauchy problem, Proc. Royal Soc. Edinburgh A:125, 115β131 (1995)
P. Marcati and R. Natalini, Weak solutions to a hydrodynamic model for semiconductors and relaxation to the drift-diffusion equation, Arch. Rational Mech. Anal. 129, 129β145 (1995)
P. A. Markowich, The Stationary Semiconductor Device Equations, Springer, Vienna, New York, 1986
P. A. Markowich, On steady-state Euler-Poisson model for semiconductors, Z. Angew. Math. Phys. 62, 389β407 (1991)
P. A. Markowich and C. Schmeiser, The drift-diffusion limit for electron-phonon interaction in semiconductors, Math. Models Methods Appl. Sci. 7, 707β729 (1997)
P. A. Markowich and P. Pietra, A non-isentropie Euler-Poisson model for a collisionless plasma, Math. Methods Appl. Sci. 16, 409β442 (1993)
P. A. Markowich, C. Ringhofer, and C. Schmeiser, Semiconductor Equations, Springer, Vienna, New York, 1989
F. Poupaud, On a system of nonlinear Boltzmann equations of semiconductor physics, SIAM J. Appl. Math. 50, 1593β1606 (1990)
F. Poupaud, Diffusion approximation of the linear semiconductor Boltzmann equation: Analysis of boundary layer, Asymptotic analysis 4, 293β317 (1991)
F. Poupaud, M. Rascle, and J.-P. Vila, Global solutions to the isothermal Euler-Poisson system with arbitrarily large data, J. Differential Equations 123, 93β121 (1995)
S. Selberherr, Analysis and Simulation of Semiconductor Device Equations, Springer, Vienna, New York, 1984
L. Yeh, Subsonic solutions of hydrodynamic model for semiconductors, Math. Methods Appl. Sci. 20, 1389β1410 (1997)
B. Zhang, Convergence of the Godunov scheme for a simplified one-dimensional hydrodynamic model for semiconductor devices, Comm. Math. Phys. 157, 1β22 (1993)
B. Zhang, On a local existence theorem for a simplified one-dimensional hydrodynamic model for semiconductor devices, SIAM J. Math. Anal. 25, 941β947 (1994)
K. Zhang, Global weak solutions of the Cauchy problem to a hydrodynamic model for semiconductors, J. Partial Differential Equations 12, 369β383 (1999)
K. Zhang, Zero relaxation limit of global weak solutions of the Cauchy problem to a hydrodynamic model for semiconductors, preprint
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