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Mathematics of Computation

Published by the American Mathematical Society since 1960 (published as Mathematical Tables and other Aids to Computation 1943-1959), Mathematics of Computation is devoted to research articles of the highest quality in computational mathematics.

ISSN 1088-6842 (online) ISSN 0025-5718 (print)

The 2020 MCQ for Mathematics of Computation is 1.78.

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Inverse-average-type finite element discretizations of selfadjoint second-order elliptic problems
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by Peter A. Markowich and Miloš A. Zlámal PDF
Math. Comp. 51 (1988), 431-449 Request permission

Abstract:

This paper is concerned with the analysis of a class of "special purpose" piecewise linear finite element discretizations of selfadjoint second-order elliptic boundary value problems. The discretization differs from standard finite element methods by inverse-average-type approximations (along element sides) of the coefficient function $a(x)$ in the operator $- \operatorname {div}(a(x) {\operatorname {grad}} u)$. The derivation of the discretization is based on approximating the flux density $J = a {\operatorname {grad}}{\mkern 1mu} u$ by constants on each element. In many cases the flux density is well behaved (moderately varying) even if $a(x)$ and $u(x)$ are fast varying. Discretization methods of this type have been used successfully in semiconductor device simulation for many years; however, except in the one-dimensional case, the mathematical understanding of these methods was rather limited. We analyze the stiffness matrix and prove that—under a rather mild restriction on the mesh—it is a diagonally dominant Stieltjes matrix. Most importantly, we derive an estimate which asserts that the piecewise linear interpolant of the solution u is approximated to order 1 by the finite element solution in the ${H^1}$-norm. The estimate depends only on the mesh width and on derivatives of the flux density and of a possibly occurring inhomogeneity.
References
  • Robert A. Adams, Sobolev spaces, Pure and Applied Mathematics, Vol. 65, Academic Press [Harcourt Brace Jovanovich, Publishers], New York-London, 1975. MR 0450957
  • I. Babuška and J. E. Osborn, Generalized finite element methods: their performance and their relation to mixed methods, SIAM J. Numer. Anal. 20 (1983), no. 3, 510–536. MR 701094, DOI 10.1137/0720034
  • I. Babuška & J. E. Osborn, Finite Element Methods for the Solution of Problems with Rough Data, Lecture Notes in Math., Vol. 1121, Springer-Verlag, Berlin and New York, 1985, pp. 1-18.
  • Philippe G. Ciarlet, The finite element method for elliptic problems, Studies in Mathematics and its Applications, Vol. 4, North-Holland Publishing Co., Amsterdam-New York-Oxford, 1978. MR 0520174
  • Pierre Grisvard, Behavior of the solutions of an elliptic boundary value problem in a polygonal or polyhedral domain, Numerical solution of partial differential equations, III (Proc. Third Sympos. (SYNSPADE), Univ. Maryland, College Park, Md., 1975) Academic Press, New York, 1976, pp. 207–274. MR 0466912
  • B. Kawohl, Über nichtlineare gemischte Randwertprobleme für elliptische Differentialgleichungen zweiter Ordnung auf Gebieten mit Ecken, Dissertation, TH Darmstadt, BRD, 1978.
  • Peter A. Markowich, The stationary semiconductor device equations, Computational Microelectronics, Springer-Verlag, Vienna, 1986. MR 821965, DOI 10.1007/978-3-7091-3678-2
  • M. S. Mock, Analysis of a discretization algorithm for stationary continuity equations in semiconductor device models. II, COMPEL 3 (1984), no. 3, 137–149. MR 782025, DOI 10.1108/eb009992
  • M. S. Mock, Analysis of a discretization algorithm for stationary continuity equations in semiconductor device models. II, COMPEL 3 (1984), no. 3, 137–149. MR 782025, DOI 10.1108/eb009992
  • Josef Nedoma, The finite element solution of parabolic equations, Apl. Mat. 23 (1978), no. 6, 408–438 (English, with Czech summary). With a loose Russian summary. MR 508545
  • D. L. Scharfetter & H. K. Gummel, "Large signal analysis of a silicon read diode oscillator," IEEE Trans. Electron Devices, v. ED-16, 1969, pp. 64-77. S. Selberherr, Analysis and Simulation of Semiconductor Devices, Springer-Verlag, Wien and New York, 1984.
  • Gilbert Strang and George J. Fix, An analysis of the finite element method, Prentice-Hall Series in Automatic Computation, Prentice-Hall, Inc., Englewood Cliffs, N.J., 1973. MR 0443377
  • W. V. Van Roosbroeck, "Theory of flow of electrons and holes in germanium and other semiconductors," Bell Syst. Techn. J., v. 29, 1950, pp. 560-607.
  • Richard S. Varga, Matrix iterative analysis, Prentice-Hall, Inc., Englewood Cliffs, N.J., 1962. MR 0158502
  • O. C. Zienkiewicz, The Finite Element Method, McGraw-Hill, London, 1977. M. A. Zlámal, "Finite element solution of the fundamental equations of semiconductor devices. II," submitted for publication, 1985.
  • Miloš Zlámal, Finite element solution of the fundamental equations of semiconductor devices. I, Math. Comp. 46 (1986), no. 173, 27–43. MR 815829, DOI 10.1090/S0025-5718-1986-0815829-6
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Additional Information
  • © Copyright 1988 American Mathematical Society
  • Journal: Math. Comp. 51 (1988), 431-449
  • MSC: Primary 65N30
  • DOI: https://doi.org/10.1090/S0025-5718-1988-0930223-7
  • MathSciNet review: 930223