Finite element approximation to initialboundary value problems of the semiconductor device equations with magnetic influence
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 Math. Comp. 59 (1992), 3962 Request permission
Abstract:
We shall consider Zlámal’s approach to the nonstationary equations of the semiconductor device theory under magnetic fields, with mixed boundary conditions. Owing to the reduced smoothness of the electric potential $\psi$ and carrier densities n and p caused by considering the mixed boundary conditions, we must use a nonstandard analysis for this procedure. Existence as well as uniqueness of the approximate solution is proved. The convergence rates obtained in this paper are slower than those previously obtained for pure Dirichlet or Neumann boundary conditions.References

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Additional Information
 © Copyright 1992 American Mathematical Society
 Journal: Math. Comp. 59 (1992), 3962
 MSC: Primary 65N30; Secondary 65N12
 DOI: https://doi.org/10.1090/S00255718199211347423
 MathSciNet review: 1134742