The energy transport and the drift diffusion equations as relaxation limits of the hydrodynamic model for semiconductors

Gasser, Ingenuin; Natalini, Roberto

doi:10.1090/qam/1686190

Authors: Ingenuin Gasser and Roberto Natalini
Journal: Quart. Appl. Math. 57 (1999), 269-282
MSC: Primary 82D37; Secondary 35Q99, 78A35, 82C22
DOI: https://doi.org/10.1090/qam/1686190
MathSciNet review: MR1686190
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Abstract: Two relaxation limits of the hydrodynamic model for semiconductors are investigated. Using the compensated compactness tools we show the convergence of (scaled) entropy solutions of the hydrodynamic model to the solutions of the energy transport and the drift-diffusion equations, according respectively to different time scales.

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